JPH0482074B2 - - Google Patents

Info

Publication number
JPH0482074B2
JPH0482074B2 JP60115819A JP11581985A JPH0482074B2 JP H0482074 B2 JPH0482074 B2 JP H0482074B2 JP 60115819 A JP60115819 A JP 60115819A JP 11581985 A JP11581985 A JP 11581985A JP H0482074 B2 JPH0482074 B2 JP H0482074B2
Authority
JP
Japan
Prior art keywords
conductivity type
type semiconductor
layer
semiconductor layer
current blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60115819A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61274385A (ja
Inventor
Hiroshi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11581985A priority Critical patent/JPS61274385A/ja
Publication of JPS61274385A publication Critical patent/JPS61274385A/ja
Publication of JPH0482074B2 publication Critical patent/JPH0482074B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP11581985A 1985-05-29 1985-05-29 埋込型半導体レ−ザ Granted JPS61274385A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11581985A JPS61274385A (ja) 1985-05-29 1985-05-29 埋込型半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11581985A JPS61274385A (ja) 1985-05-29 1985-05-29 埋込型半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS61274385A JPS61274385A (ja) 1986-12-04
JPH0482074B2 true JPH0482074B2 (en]) 1992-12-25

Family

ID=14671886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11581985A Granted JPS61274385A (ja) 1985-05-29 1985-05-29 埋込型半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS61274385A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648743B2 (ja) * 1987-02-18 1994-06-22 三菱電機株式会社 半導体レ−ザ装置の製造方法
JP2663118B2 (ja) * 1987-03-12 1997-10-15 富士通株式会社 半導体発光素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223395A (ja) * 1982-06-21 1983-12-24 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS5957486A (ja) * 1982-09-27 1984-04-03 Nec Corp 埋め込み形半導体レ−ザ
JPS59175783A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体発光装置
JPS6077486A (ja) * 1983-10-05 1985-05-02 Matsushita Electric Ind Co Ltd 半導体レ−ザ素子の製造方法

Also Published As

Publication number Publication date
JPS61274385A (ja) 1986-12-04

Similar Documents

Publication Publication Date Title
JPH0482074B2 (en])
US5218614A (en) Semiconductor laser device
JPS61230388A (ja) 埋込型半導体レ−ザ
JPH05299771A (ja) 半導体レーザダイオード
JPS5967684A (ja) レ−ザ−・ダイオ−ド
JPS61214591A (ja) 半導体レ−ザ素子
JPS6261383A (ja) 半導体レ−ザおよびその製造方法
JPH0513872A (ja) ヘテロ接合型半導体レーザ
JP2663118B2 (ja) 半導体発光素子
JPH03203282A (ja) 半導体レーザダイオード
JPH0436598B2 (en])
JP3028760B2 (ja) 半導体発光素子
JPS61194886A (ja) 半導体レ−ザ素子
JPS63142883A (ja) 半導体レ−ザ装置
JPS6237900B2 (en])
JPS61228693A (ja) 半導体発光装置
JPS5884485A (ja) 埋め込みヘテロ構造半導体レ−ザ
JPS60130876A (ja) 半導体レ−ザ
JPH05226775A (ja) 半導体レーザ素子
JPH0438880A (ja) 半導体発光素子
JPS6132485A (ja) 半導体発光素子
JPS60217686A (ja) 半導体レ−ザ素子
JPS62159486A (ja) 半導体発光装置
JPH027488A (ja) 埋め込みヘテロ構造半導体レーザ
JPH0531836B2 (en])

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term